D882S npn plastic encapsulated transistor elektronische bauelemente 08-oct-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? collecto r ? ? base emitter ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? power dissipation classification of h fe rank r 0 y gr range 60-120 100-200 160-320 200-400 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 6 v collector current - continuous i c 3 a collector power dissipation p c 625 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 40 - - v i c =100 a, i e = 0 a collector to emitter breakdown voltage v (br)ceo 30 - - v i c =10 ma, i b = 0 a emitter to base breakdown voltage v (br)ebo 6 - - v i e =100 a, i c = 0a collector cut-off current i cbo - - 1 a v cb =40 v, i e = 0 a collector cut-off current i ceo - - 10 a v ce =30 v, i b = 0 a emitter cut-off current i ebo - - 1 a v eb =6 v, i c =0 a dc current gain h fe 60 - 400 v ce =2 v, i c =1 a collector to emitter saturation voltage v ce(sat) - - 0.5 v i c =2 a, i b =0.2 a base to emitter saturation voltage v be(sat) - - 1.5 v i c =2 a, i b =0.2 a transition frequency f t 50 - - mhz v ce = 5 v, i c = 0.1 a, f=10 mhz to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 a c e k f d b g h j
D882S npn plastic encapsulated transistor elektronische bauelemente 08-oct-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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